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基于集成学习模型的GAAFET电气性能预测
Xuyan Zhang1, Siyu Chen1, Shulong Wang1
1The School of Microelectronics, Xidian University, Xi'an 710071, People'Republic of China.
Nanotechnology
|February 22, 2024
概括
本研究介绍了一种集成的深度学习和机器学习模型,用于预测网关全方位场效应晶体管 (GAAFET) 的电特性. 该模型比传统方法提供更快,更准确的预测,有助于微电子技术的发展.
科学领域:
- 微电子工程 微电子工程
- 计算物理 计算物理
- 科学中的人工智能.
背景情况:
- 细磁场效应晶体管 (FinFETs) 由于特征大小的减少而接近物理限制.
- 门全方位场效应晶体管 (GAAFET) 提供了增强的门控制和可扩展性,以提高设备性能.
- 传统的技术计算机辅助设计 (TCAD) 方法用于设备特征是耗时且低效的新设备开发.
研究的目的:
- 开发一种新的,高效和准确的方法来预测GAAFET的电气特性.
- 在微电子研究中克服传统的TCA模拟的局限性.
- 为了利用集成深度学习 (DL) 和机器学习 (ML) 对于半导体设备建模的力量.
主要方法:
- 提出了一种结合深度学习和机器学习方法的综合学习模型.
- 该模型经过训练和验证,以预测GAAFETs的直流 (DC) 特性,电容特性和电气参数.
- 使用线性回归因子 (R^2) 和根平均平方误差 (RMSE) 评估性能.
主要成果:
- 综合学习模型实现了线性回归因数 (R^2) 大于0.99.
- 该模型在预测中显示了非常小的根平均平方误差 (RMSE).
- 拟议的模型在预测GAAFET特征方面明显优于单个DL或ML方法.
结论:
- 集成学习模型为预测GAAFET电气特性提供了快速而准确的解决方案.
- 这种方法为微电子中的设备和电路模拟提供了一个新的范式.
- 该研究强调了混合人工智能模型在推动半导体研发方面的潜力.
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