具有自我纠正能力的-阳极记忆器的界面电阻切换
Dominik Knapic1, Alexey Minenkov2, Elena Atanasova1
1Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.
Nanomaterials (Basel, Switzerland)
|February 23, 2024
概括
研究人员探索了- (Nb-Ti) 无氧记忆器,确定了挥发性,自我纠正行为的最佳组成. 该Nb-46%Ti合金表现出卓越的性能,包括高阻力比率和耐久性.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 电气工程 电气工程
背景情况:
- 记忆器对于下一代电子产品至关重要,它提供非易失性内存和神经形态计算能力.
- - (Nb-Ti) 合金为开发新型记忆器件提供了一个有前途的材料系统.
- 了解构成和记忆行为之间的关系是优化设备性能的关键.
研究的目的:
- 通过组合选方法研究Nb-Ti阳极记忆器的广泛组成范围.
- 为了识别表现出挥发性和自我纠正特征的memristors.
- 为了确定最佳的Nb-Ti合金构成,用于高性能记忆应用.
主要方法:
- 通过喷雾制造Nb-Ti薄膜组合库的制造.
- 在金属绝缘体-金属 (MIM) 结构中形成活性混合氧化物层的阳极氧化.
- 使用I-U扫描来分析记忆式切换行为的电气表征.
主要成果:
- 识别具有挥发性和自我纠正行为的memristors在一个广泛的组成范围 (22-64 at.% Ti).
- 在所有分析的设备中证明多层电阻开关特性.
- Nb-46 at.% Ti组合产生了表现最好的memristor,具有较高的阻力比率 (4-6 × 10^5),优异的保留 (10^6读数) 和耐用性 (10^6周期).
- 不包括31-39at%Ti的合金,因为耐久性有限 (10周期).
结论:
- 在这个系统中,Nb-46 at.% Ti合金组成是适合阳极式记忆器的最佳选择.
- 记忆行为归因于接口,非丝状电阻切换,由TEM分析证实.
- 这项研究为Nb-Ti记忆器的组合-设备性能关系提供了宝贵的见解.
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