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Updated: Jul 2, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Published on: July 17, 2020

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通过范德瓦尔斯集成增强多层InSe晶体管中载体移动性的载体移动性

Zhiwei Li1,2, Jidong Liu1,2, Haohui Ou1,2

  • 1State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, China.

Nanomaterials (Basel, Switzerland)
|February 23, 2024
PubMed
概括

范德瓦尔斯集成显著提高了化 (InSe) 场效应晶体管 (FET) 中的电子流动性. 这种方法提高了InSe FET的性能和稳定性,用于先进的电子和光电子.

关键词:
两维材料是二维材料.运营商移动性的运营商移动性场效应晶体管电晶体管.范德瓦尔斯的整合

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