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Updated: Jun 25, 2026

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通过非对称双网门的太赫兹检测双层石墨烯FETs与集成的带天线

E Abidi1, A Khan1, J A Delgado-Notario1

  • 1Nanotech Group, Facultad de Ciencias, Universidad de Salamanca, 37008 Salamanca, Spain.

Nanomaterials (Basel, Switzerland)
|February 23, 2024
PubMed
概括

一个不对称的双网格门双层石墨烯场效应晶体管 (ADGG-GFET) 带有带天线显示了十倍增加的太赫兹 (THz) 检测. 这种增强的光电流响应是由于天线合和门诱导的载体调制.

关键词:
两维材料是二维材料.在FETs中,FETs是FET.带天线 带天线拖动效应的影响拖动效应.双格门是双格的门.石墨烯是一种石墨烯.塑子是什么? 塑子是什么

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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
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