在拓磁体MnBi_{2}Te_{4}中电控异常霍尔效应和轨道磁化
Ruobing Mei1, Yi-Fan Zhao1, Chong Wang2
1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA.
Physical review letters
|February 23, 2024
概括
电子合的MnBi_{2}Te_{4}薄膜在异常的霍尔电阻和歇斯底里循环中表现出偶奇效应. 这是由于材料中明显的反铁磁构造和磁过渡引起的.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 量子现象是一种量子现象.
背景情况:
- 磁性拓材料中的偶奇效应尚未完全理解.
- 由于其内在的磁拓性质,MnBi_{2}Te_{4}是探索量子现象的有前途材料.
研究的目的:
- 阐明电子合的MnBi_{2}Te_{4}薄膜中偶奇效应背后的内在机制.
- 为了解释观察到的异常霍尔电阻和异常歇斯底里循环形状在偶数和奇数七倍层 (SLs) 中的相反迹象.
主要方法:
- 分子束表 (MBE) 增长的MnBi_{2}Te_{4}薄膜与电子兴奋剂.
- 异常霍尔效应 (AHE) 的测量.
- 磁圆二元化 (MCD) 的测量.
- 磁过渡和表面状态的理论建模.
主要成果:
- 在偶SL MnBi_{2}Te_{4} 薄膜中确定了两个不同的反铁磁 (AFM) 配置,导致表面状态的不同零兰道水平能量.
- 观察到AHE和MCD中偶SL的非零歇斯底里循环,归因于AFM状态之间的过渡和随后过渡到铁磁状态.
- 确定了轴向参数和磁电系数之间的明确关系和区别.
- 在MnBi_{2}Te_{4}膜中证明了磁电系数的偶奇振荡行为.
结论:
- 在MnBi_{2}Te_{4}中偶奇效应与竞争的AFM状态和它们对表面电子状态的影响密切相关.
- 拟议的模型成功地解释了复杂的AHE歇斯底里循环,并提供了对磁电性质的见解.
- 这项工作促进了对磁拓材料及其潜在应用的理解.
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