InZnO,

Xuan Zhang1, Sung-Woon Cho1

  • 1Department of Advanced Components and Materials Engineering, Sunchon National University, Sunchon 57922, Republic of Korea.

Micromachines
|February 24, 2024
PubMed
概括

优化氧化物薄膜晶体管 (TFT) 的性能需要精确控制半导体薄膜厚度. 8纳米的InZnO薄膜实现了极好的稳定性和电气性能,与更薄或更厚的替代品不同.

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