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Updated: Jul 2, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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模拟研究FinFET设备在单次事件上调中的电荷收集机制

Hongwei Zhang1,2, Yang Guo1, Shida Wang2

  • 1College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China.

Micromachines
|February 24, 2024
PubMed
概括

FinFET设备表现出不同的单一事件扰动 (SEU) 响应. 在SEU期间,PMOS晶体管表现出多节点电荷收集,导致SRAM扰乱和恢复,与NMOS设备不同.

关键词:
在FINFET的基础上.这是一个SRAM.双极放大效应的双极放大效应收取收费的收费方式是:收取收费.

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