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一个新道准备方案,以优化三维NAND闪存内存中的程序干扰

Kaikai You¹, Lei Jin^1,2, Jianquan Jia¹

¹Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

|February 24, 2024

概括

这项研究引入了"Gate诱导排水泄漏 (GIDL) 预充电",以提高3D NAND闪存的可靠性. 这种方法通过增强频道潜力而没有结构变化来抑制节目干扰.

科学领域:

电气工程电气工程
半导体设备物理半导体设备物理
材料科学材料科学材料科学

背景情况:

三维 (3D) 垂直NAND闪存由于程序干扰而面临可靠性挑战.
没有选择的词线 (WL) 的狭窄的操作电压窗口加剧了福勒-诺德海姆 (FN) 道.
对程序和受阻字符串的矛盾电压要求使干扰抑制复杂化.

研究的目的:

在3D NAND中研究通道电位和电子密度之间的关系.
开发一种用于减轻3D NAND闪存中的程序干扰的新方法.
为了提高3D NAND设备的可靠性和操作窗口.

主要方法:

对通道潜力和电子密度动态的系统分析.
引入一个"门引起的排水泄漏 (GIDL) 预付费"计划.
使用技术计算机辅助设计 (TCAD) 模拟和真实数据进行验证.

主要成果:

通过利用产生的孔,GIDL预充电方法有效地提高了未选择的通道潜力.
在3D NAND设备中观察到明显抑制的程序干扰.
在不改变设备结构或操作电压的情况下,证明了更大的通道干扰窗口.

结论:

GIDL预充技术为3D NAND中的程序干扰提供了一个可行的解决方案.
这种方法提高了可靠性,而不需要新的制造工艺或修改操作参数.
这些发现为更强大,更可靠的NAND闪存提供了途径.

关键词:

3D NAND闪光灯可以使用.在GIDL的预付费中.程序干扰程序干扰

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