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Updated: Jul 2, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

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Published on: June 3, 2015

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一种基于Si的新型MOSFET用于辐射增强

Weifeng Liu1,2, Zhirou Zhou1, Dong Zhang1

  • 1State Key Discipline Laboratory of Wide Band-Gap Semiconductor Devices and Integrated Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|February 24, 2024
PubMed
概括

这项研究通过修改设备结构以减少单事件效应 (SEE) 期间的电荷收集来提高N通道金属氧化物半导体场效应晶体管 (NMOSFET) 的辐射抵抗. 拟议的设计大大降低了泄漏电流,并提高了驱动电流的性能.

关键词:
在 MOS 设备上,MOS 设备是重离子是重的离子.经过辐射硬化而变质的一个单一事件的效应.

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