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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Published on: June 3, 2015

新型SiC沟MOSFET带有改善的第三象限性能和切换速度

Yangjie Ou¹, Zhong Lan¹, Xiarong Hu²

¹School of Electrical Engineering, Southwest Jiaotong University, Chengdu 611756, China.

|February 24, 2024

概括

这项研究引入了一种新碳化物 (SiC) MOSFET,具有增强的反向导和切换性能. 新设计减少了电压下降和寄生电容,使其成为高频电力电子应用的理想选择.

科学领域:

电力电子电力电子电力电子
半导体设备半导体设备
材料科学材料科学材料科学

背景情况:

碳化 (SiC) MOSFET对于高功率和高频应用至关重要.
现有的设计面临逆向导和切换损失的挑战.
优化设备结构是克服这些局限性的关键.

研究的目的:

提出并研究一种新的SiC双槽MOSFET设计.
为了提高反向导电特性和切换性能.
为了减少寄生电容,提高高频运行.

主要方法:

使用二维设备模拟来分析拟议的SiC MOSFET.
与标准双槽MOSFET (DT-MOS) 和带有通道MOS二极管 (DTC-MOS) 的DT-MOS进行了性能比较.
评估了关键参数,包括前向电压下降 (V_F),阻断电压 (BV),氧化物电场 (E_mox),门排水电容 (C_gd) 和门排水电荷 (Q_gd).

主要成果:

拟议的MOSFET在高电流密度 (100A/cm2) 时表现出较低的V_F,防止双极退化.
达到降低的最大氧化物电场 (E_mox) 和较低的门排水电容 (C_gd) 和电荷 (Q_gd).
尽管特异性启动电阻略高 (R_on,sp),但该设备的开关损失显著降低.

结论:

新的SiC MOSFET设计提供了卓越的反向导和切换性能.
降低寄生电容导致高频应用的显著优势.
这种设计为下一代电力电子系统提供了有希望的进步.

关键词:

在L形门源上.这是一个SiC MOSFET.双极性退化退化是双极性退化.门排水电容量排水电容量低屏障二极管的使用

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