一个28GHz的GaN6位相位变速器MMIC与连续调校准技术
Soyeon Seo1, Jinho Lee2, Yongho Lee1
1Department of Electronic Convergence Engineering, Kwangwoon University, Seoul 01897, Republic of Korea.
Sensors (Basel, Switzerland)
|February 24, 2024
概括
使用化 (GaN) 高电子移动性晶体管 (HEMT) 技术的新型6位相位变换器实现了Ka频段系统的高精度. 一种连续调节校准技术显著减少相位误差,证明了GaN.
科学领域:
- 电气工程 电气工程
- 材料科学 材料科学 材料科学
- 微波工程 微波工程
背景情况:
- 阶段式阵列系统需要精确的阶段控制来控制光束方向.
- 化 (GaN) 高电子移动性晶体管 (HEMT) 技术为高频应用提供了优势.
- 现有的相变器在毫米波频率上实现高精度和高效率方面面临着挑战.
研究的目的:
- 为了呈现一个使用GaN HEMT技术的28 GHz,6位数字控制的相位变换器.
- 引入和验证一种新的连续调整校准技术,以提高相位精度.
- 为了证明GaN技术适用于毫米波高功率相序列收发器系统的适用性.
主要方法:
- 设计了一个6位相变器,采用混合开关线和开关波器电路架构.
- 通过控制非状态HEMT的网关偏差电压,实施了一种新的连续调整校准技术.
- 使用0.15μm的GaN HEMT工艺制造了相位变换器.
主要成果:
- 在 28 GHz 达到 64 个离散相位状态,步调为 5.625°.
- 在校准后,从8.56°降低到1.08°,显著降低了根-平均-平方 (RMS) 阶段误差.
- 证明校准对插入损失,RMS振幅误差和P1dB的影响最小.
结论:
- 开发的GaN HEMT相变器为Ka频段应用提供了高精度和高效率.
- 提出的连续调节校准技术有效地提高了相位精度,而不会降低其他性能指标.
- GaN技术是毫米波高功率相序列收发器系统的可行和有前途的解决方案.
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