一次射击激光诱导的交换偏差反铁磁体的切换
Zongxia Guo1,2, Junlin Wang3, Gregory Malinowski2
1Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing, 100191, China.
Advanced materials (Deerfield Beach, Fla.)
|February 26, 2024
概括
研究人员使用单一的秒激光脉冲在IrMn/CoGd双层中展示了反铁磁磁化的一次性切换. 这种超快的方法有效地设置了自旋电子设备的交换偏差.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 超快磁性操纵对于理解动态磁性属性至关重要.
- 一次性磁开关主要局限于特定的磁性材料类型.
- 铁磁/反铁磁双层的交换偏差对于磁器件的功能至关重要.
研究的目的:
- 为了证明使用秒激光脉冲对抗铁磁磁化的一次性切换.
- 研究IrMn/CoGd双层中交换偏差 (He) 的操纵.
- 探索用于控制磁性秩序的超快速和节能方法.
主要方法:
- 在IrMn/CoGd双层中使用femtosecond激光脉冲进行一次性切换的实验演示.
- 激光流动的系统变化,层厚度和组成.
- 原子模拟来预测反铁磁磁化切换和恢复的动态.
主要成果:
- 反铁磁铁的单次切换成功,改变了交换偏差的信号和振幅 (He).
- 在广泛的激光流动和材料参数中证明了操纵.
- 模拟预测了在2皮秒内超快速切换和恢复反铁磁磁化.
结论:
- 实现了迄今为止最快,最节能的交易偏差设置方法.
- 这些发现为超快的自旋电子设备应用开辟了新的途径.
- 为磁性异构结构的动态控制提供了一条新的途径.
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