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Updated: Jun 30, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
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Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

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在Al纳米薄膜和GaN之间的接口上,没有平衡的电子 - 声子合

Jiao Chen1, Wenlong Bao2, Zhaoliang Wang1

  • 1Thermal Engineering and Power Department, China University of Petroleum, Qingdao 266580, China. wzhaoliang@upc.edu.cn.

Physical chemistry chemical physics : PCCP
|February 27, 2024
PubMed
概括

了解 (Al) 和化 (GaN) 中的电子 - 声子合对于电子设备至关重要. 这项研究揭示了Al纳米膜增强了电子-声子合,纵向声学声子在能量转移中发挥着关键作用.

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes07:00

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Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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The Electrical Double Layer

In the region where two bulk phases meet, an intricate electric charge distribution arises due to charge transfer, ion adsorption, molecular orientation, and charge distortion. This complex distribution is commonly referred to as the electrical double layer.When a solid electrode interfaces with ions in an electrolyte solution, the speed of electron transfer dictates the rates of oxidation and reduction. The electrode acquires a charge through the escape of atoms into the solution as cations or...