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Updated: Jul 2, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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通过界面兴奋剂进行MoTe2/铁电异构结构的光学调制.

Yuqing Zhou1,2, Chao Yang1, Xingke Fu3

  • 1Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, Department of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.

ACS applied materials & interfaces
|February 27, 2024
PubMed
概括

接口兴奋剂控制铁电极化使用紫外线在MoTe2/BaTiO3/La0.7Sr0.3MnO3异构结构. 厚度依赖的兴奋剂导致相反的极化切换,推进纳米电子和光电子设备.

关键词:
2D TMD 2D TMD 是一个二维的世界.MoTe2 / 铁电异构结构.域调制领域的调制.接口 兴奋剂 兴奋剂在光电子电子系统中,光学电子

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