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通过设备架构和兴奋剂过程改进基于碳纳米管的射频场效应晶体管

Li Ren¹, Jianshuo Zhou¹, Zipeng Pan¹

¹Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, Schools of Electronics, Peking University, Beijing 100871, China.

ACS applied materials & interfaces

|February 27, 2024

概括

优化碳纳米管 (CNT) 射频 (RF) 场效应晶体管 (FET) 通过新的设备架构和兴奋剂显著提高性能. 这种方法增强了当前密度,切断频率和放大器增益,用于先进的射频电子.

科学领域:

材料科学材料科学材料科学
电气工程电气工程
纳米技术纳米技术

背景情况:

半导体碳纳米管 (CNTs) 对射频 (RF) 电子具有出色的电性能.
基于CNT的射频场效应晶体管 (FET) 的进展主要集中在材料和制造上,设备架构未得到充分探索.

研究的目的:

创新地结合设备架构和兴奋剂过程,以优化基于CNT的RF FET.
统计分析这些组合优化对设备性能的影响.

主要方法:

在随机定向的CNT材料上制造基于CNT的RF FET,具有三个不同的门位.
实施量身定制的兴奋剂计划,并与建筑变化一起.
性能评估包括电流密度,切断频率和最大振荡频率.

主要成果:

优化的FET显示电流密度 (透导) 增加了2-3倍.
与未优化设备相比,切断频率和最大振荡频率提高了1.3倍.
一个CNT射频放大器在X频段应用中在8GHz时显示出大约10 dB的传感器增益改善.

结论:

设备架构和兴奋剂提供了一种强大的策略,可以提高CNT RF FET的性能,而不仅仅是材料和工艺的改进.
这种协作优化方法为下一代射频电子铺平了道路.
这些发现为推进基于CNT的射频设备功能提供了新的方向.

关键词:

放大器放大器放大器放大器碳纳米管是如何使用的截止频率的截止频率设备架构设备架构无线电频率无线电频率的使用情况.

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