分子动力学研究,研究化热解石墨和铜之间的界面热电阻
Xinyu Jiang1, Xiaoyang Li1, Dong Li1
1State Key Laboratory of Multiphase Flow in Power Engineering, Xi'an Jiaotong University Xi'an 710049 China lidong@mail.xjtu.edu.cn.
RSC advances
|February 28, 2024
概括
微电子中的接口热阻对于效率至关重要. 圆柱状的铜表面和三层化氧化石墨 (APG) 通过增强热传递来最大限度地降低这种阻力.
科学领域:
- 材料科学 材料科学 材料科学
- 热力工程是热力工程中的一个.
- 纳米技术纳米技术
背景情况:
- 微电子中的高散热降低了运营效率.
- 化环氧化石墨 (APG) 提供优越的导热性.
- 在APG和铜之间的接口热阻力影响热传输.
研究的目的:
- 在微观水平上研究APG-Cu接口的热电阻.
- 分析铜厚度,表面形态和APG厚度的影响.
主要方法:
- 过渡热反射方法. 过渡热反射方法.
- 非平衡分子动力学模拟.
主要成果:
- 铜的厚度对接口的热电阻的影响很小.
- 圆柱状的铜表面由于接触面积增加而表现出比矩形表面更低的阻力.
- 三层APG最小化了接口的热电阻 (2.2 × 10−9 K m2 W−1) 由于最优的声移位.
结论:
- 微表面形态和APG分层显著影响热电阻.
- 优化接口设计是改善微电子设备散热的关键.
- 在理解和最大限度地减少接口热阻力时,phonon行为至关重要.
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