在拓绝缘体GeBi2Te4中的压力驱动的圆顶形超导
Chenchen Liu1, Yiping Gao1, Can Tian1
1State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China.
Journal of physics. Condensed matter : an Institute of Physics journal
|February 28, 2024
概括
高压在拓绝缘体GeBi2Te4中诱导超导,达到8.4K.结构相变与超导相对应,为压力调节的电子特性提供了洞察力.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 固态化学 固态化学
背景情况:
- 拓绝缘体具有独特的电子和结构性质.
- 高压是调整这些特性在拓绝缘体中的关键参数.
研究的目的:
- 在高压下研究拓绝缘体GeBi2Te4的结构和电传输特性.
- 探索 GeBi2Te4.4 中结构相变和超导性之间的关系.
主要方法:
- 使用高压技术研究了GeBi2Te4.4.
- 同步射线X射线衍射被用来识别结构相位过渡.
- 为了观察超导,进行了电传输测量.
主要成果:
- GeBi2Te4表现出两种结构相变:R-3m到C2/m,然后到Im-3m.
- 从6.6GPa开始观察到超导,与第一个结构转变有关.
- 超导过渡温度 (Tc) 达到8.4K的最大值,具有圆顶形相位图.
结论:
- 压力诱导的结构相变显著影响GeBi2Te4.4的电子特性.
- 这项研究为了解压力下的拓绝缘体中的晶体结构和超导性之间的相互作用提供了一个框架.
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