,

Yucheng Wang1, Dingyun Guo1, Junyu Jiang1

  • 1School of Microelectronics, Northwestern Polytechnical University, Xi'an 710072, China.

PubMed
概括

准二维矿记忆体,特别是BA0.15MA0.85PbI3,显示出优越的电阻切换和突触可塑性. 这一突破为矿记忆器应用提供了有希望的理论指导.