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Updated: Jul 1, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

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在具有高道概率的2D Ge/GaAs异构结构中从肖特基接触到欧米接触的过渡

Yang Shen1,2, Jianfeng Zhu1, Qihao Zhang1

  • 1Institute of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, P. R. China. yshen@cjlu.edu.cn.

Physical chemistry chemical physics : PCCP
|March 1, 2024
PubMed
概括

在金属半导体连接处实现低电阻的欧姆接触是具有挑战性的. 这项研究表明,德国/GaAs连接可以通过应变或电场过渡到欧米接触,增强2D电子设备的电子注入.

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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