在磁电自旋轨道纳米设备中基于电压的磁化切换和读取
Diogo C Vaz1, Chia-Ching Lin2, John J Plombon2
1CIC nanoGUNE BRTA, 20018, Donostia-San Sebastian, Basque Country, Spain. diogocastrovaz@gmail.com.
Nature communications
|March 1, 2024
概括
研究人员使用多铁材料在纳米设备中展示了电压控制的磁切换. 这一突破为实现高效的磁化控制提供了通往低功耗,超越CMOS逻辑技术的途径.
科学领域:
- 材料科学 材料科学 材料科学
- 凝聚物质物理学 凝聚物质物理学
- 纳米技术纳米技术
背景情况:
- 由于CMOS技术的扩展限制,需要新的逻辑设备.
- 基于旋转的设备提供缩放,但具有高的切换能量.
- 磁电材料有望控制低功率的磁化,但在设备层面的结果很少.
研究的目的:
- 为了证明基于电压的磁化切换和读取在室温下的纳米设备.
- 探索磁电材料在低功耗电子产品中的潜力.
- 建立磁电自旋轨道逻辑的构建块.
主要方法:
- 使用多铁体BiFeO3和铁磁CoFe之间的交换合用于磁化写作.
- 使用CoFe和Pt之间的旋转到充电电流转换进行读取.
- 通过与BiFeO3极化和环状物传播相关的显微镜技术研究磁化逆转.
主要成果:
- 在纳米设备中实现了基于电压的磁化切换和读取.
- 证明了BiFeO3的电转换逆转了CoFe磁化,产生了不同的电压输出.
- 链接磁化逆转到极化状态和BiFeO3.3中的反铁磁性环状物传播.
结论:
- 这项研究为迈向磁电自旋轨道逻辑的基础提供了一步.
- 这项工作为开发超出CMOS技术的低功耗技术开辟了新的途径.
- 在多铁结构中,电压控制的磁切换在室温下是可行的.
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