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Updated: Jul 1, 2025

Light Enhanced Hydrofluoric Acid Passivation: A Sensitive Technique for Detecting Bulk Silicon Defects
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通过接口被动化和批量兴奋剂来提高基于哈夫尼亚的MFIS电容器的铁电性能

Jianxing Yang1, Yufang Xie1, Chengyan Zhu1

  • 1School of Physics and Electronic Engineering, Jiangsu University, Zhenjiang 2015, 27, 18112013, People's Republic of China.

Nanotechnology
|March 2, 2024
PubMed
概括

这项研究通过设计氧气空缺来增强基于哈夫尼亚 (HfO2) 的铁电薄膜,提高非易失性记忆的性能和耐久性. 该方法使用Al2O3中间层和Al剂来改善铁电特性.

关键词:
兴奋剂的使用 兴奋剂的使用铁电机电机电机电机电机电机哈夫尼亚 哈夫尼亚 哈夫尼亚接口 接口 接口 接口 接口一个叫醒-up-up.

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A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy10:40

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MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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