金属 - 绝缘体 - 半导体舒特基屏障高度对绝缘体组成的依赖性
Benjamin E Davis1, Nicholas C Strandwitz1
1Department of Materials Science and Engineering, Lehigh University, 5 E Packer Avenue, Bethlehem, Pennsylvania 18015, United States.
概括
研究高-κ道氧化物显示,它们显著改变金属绝缘体半导体肖特基屏障高度 (ΦB). 在SiO/高-κ接口上的双极模型解释了这些ΦB的变化,有助于接触设计.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 表面科学是一门学科.
背景情况:
- 金属绝缘体半导体 (MIS) 结构在电子设备中至关重要.
- 通过高-κ介层观察到Schottky屏障高度 (ΦB) 调制,但不完全理解.
- 预测 ΦB 是设计高效的肖特基和欧姆接触的关键.
研究的目的:
- 系统地研究各种高-κ道氧化物对n-Si/Ni接触器的Schottky屏障高度 (ΦB) 的影响.
- 阐明了由高-κ介层对 ΦB调制负责的潜在机制.
- 为设计电子接触器中氧化物堆提供预测标准.
主要方法:
- 制造的n-Si/Ni接触器与0.5纳米层的七种不同的高-κ氧化物和原生氧化.
- 使用各种技术测量舒特基屏障高度 (ΦB).
- 实验结果与 ΦB调制的理论模型进行比较.
主要成果:
- 引入高-κ氧化物导致了FB的显著变化,增加到0.4 eV,减少到0.2 eV.
- 实验数据显示,SiO/高-κ接口上的二极极模型与最强的相关性.
- 双极形成的原因是原生SiO和高-κ氧化物之间的氧气面积密度差异.
结论:
- 这项研究阐明了高-κ介层对Schottky屏障高度影响背后的机制.
- 一个基于氧气面积密度差异的双极模型有效地解释了ΦB调制.
- 这种知识可以通过预测氧化物堆的影响来更好地设计肖特基和欧姆接触器.
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