在场效应晶体管中的聚合物半导体利用灵活和高表面积扩展的聚四乙烯膜门介电物
Christopher R Bond1, Howard E Katz1, Daniel J Frydrych2
1Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States.
ACS applied materials & interfaces
|March 4, 2024
概括
使用扩展聚四乙烯 (ePTFE) 膜作为门介电材料的灵活有机场效应晶体管 (OFET) 显示出更好的性能. 化EPTFE半导体聚合物接口显著提高了先进电子应用的电荷载体移动性.
科学领域:
- 材料科学 材料科学 材料科学
- 有机电子 有机电子
- 半导体物理 半导体物理
背景情况:
- 有机场效应晶体管 (OFET) 对于灵活的电子产品至关重要.
- 门介电特性显著影响OFET性能.
- 扩展聚四乙烯 (ePTFE) 提供了独特的微观结构和灵活性.
研究的目的:
- 为了研究化对使用ePTFE门介电材料的OFET的影响.
- 为了提高半导体聚合物基OFET的电荷载体移动性.
- 探索ePTFE膜在柔性电子设备中的潜力.
主要方法:
- 使用ePTFE膜和多[2,5-bis(2-octyldodecyl) pyrrolo[3,4-c]pyrrole-1,4(2H,5H) -dione-3,6-diyl) -alt-(2,2':5',2′′:5′′,2′′′-quaterthiophen-5,5′′′-diyl) ] (PDPP4T) 半导体制造OFET.
- 在50°C至200°C的温度下对OFET进行火.
- 使用扫描电子显微镜 (SEM) 和晶体管性能测量进行表征.
- 开发一个能够考虑到 ePTFE 微孔结构的移动性模型.
主要成果:
- 50°C以上的火显著改善了OFET的行为和输出电流.
- 使用ePTFE在200°C火时,获得了1.8±1.0cm2/Vs的最大孔移动性.
- 这与使用常规氧化晶片 (0.09 ± 0.03 cm2/V s) 的OFET相比,是一个显著的增加.
结论:
- 具有独特微观结构的耐热eptfe膜可以提高OFET中电荷载体的移动性.
- 响应性半导体聚合物薄膜可以有效地沉积在柔性,不湿的ePTFE膜上.
- 这种方法为灵活的电子应用提供了一种途径,可以显著提高OFET的性能.
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