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Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.7K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.7K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

257
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
257
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

403
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
403
Fermi Level Dynamics01:12

Fermi Level Dynamics

246
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
246
Fermi Level01:18

Fermi Level

598
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
598

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相关实验视频

Updated: Jul 1, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
11:10

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

Published on: May 23, 2018

11.9K

通过VO2薄膜进行高效的两极化不敏感的准BIC调制.

Hongkun Zhong, Tiantian He, Yuhao Wang

    Optics express
    |March 5, 2024
    PubMed
    概括

    本研究引入了用于先进光学调制器的二氧化-二氧化元表面中对极化不敏感的准BIC. 这些新的超表面不论光的极化如何都保持性能,从而实现高效的调制.

    科学领域:

    • 超表面和纳米光子学
    • 光学调制器的光学调制器
    • 阶段变化材料 阶段变化材料

    背景情况:

    • 连续性的边界状态 (BIC) 能够实现高质量的因子元面.
    • 准BIC为传感和调制提供了清晰的光谱特征.
    • 现有的准BIC通常由于Cs对称性而遭受极化敏感性.

    研究的目的:

    • 在元表面中开发极化不敏感的准BIC.
    • 为了研究Si-VO2混合元表面,以实现高效的光学调制.
    • 为了克服半BIC设备中极化偏差引起的性能下降.

    主要方法:

    • 将缺陷引入Cs,C4和C4v对称的元表面,以创建准BIC.
    • 使用二氧化瓦纳 (VO2) 作为调节的相变材料.
    • 执行多极分解并分析元表面的极化反应.

    主要成果:

    • 具有C4和C4v对称性的元表面表现出优越的两极化独立特性.
    • 在Si-VO2混合元表面中实现了具有强大的Fano共振的准BIC.

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    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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    High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
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    High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

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    相关实验视频

    Last Updated: Jul 1, 2025

    Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
    11:10

    Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model

    Published on: May 23, 2018

    11.9K
    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
    09:49

    In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

    Published on: May 13, 2020

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    High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
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    High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy

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  • 使用极化不敏感的准BIC,获得了342%的最大相对调制深度.
  • 结论:

    • 在Si-VO2混合元表面中使用极化不敏感的准BIC证明了高效的调制.
    • 在基于BIC的应用程序中实现了相同的两极分化反应,这是该领域的首例.
    • 为设计偏振独立的准BIC和推进可调整的集成设备铺平了道路.