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在散装的Ge基板上单体集成的940nmVCSEL

Zeyu Wan, Yun-Cheng Yang, Wei-Hsin Chen

|March 5, 2024

概括

研究人员开发了基于的新型垂直腔表面发射激光 (VCSEL) 技术,比传统的化 (GaAs) 产品提高了晶圆质量和设备性能.

科学领域:

半导体物理半导体物理
材料科学材料科学材料科学
光电学是指光电子产品.

背景情况:

开发基于 (Ge) 的垂直腔表面发射激光器 (VCSEL) 对于在光子平台上集成光电子设备至关重要.
现有的Ge-VCSEL技术缺乏详细的流程披露,阻碍了进一步的开发和采用.

研究的目的:

为基于Ge的VCSEL建立一个独立的表层和制造过程.
为了使基于化 (AlGaAs) 的半导体设备能够集成到散装Ge基板上.
详细介绍Ge-VCSELs的基底规格,过渡层和制造过程.

主要方法:

开发了一种独特的基于Ge的表过程.
为AlGaAs-on-Ge集成优化过渡层结构和组成.
基于Ge的VCSEL设备的制造.

主要成果:

与GaAs对应物相比,基于Ge的VCSEL晶片的表面粗度-平方根平均值减少了40%,平均弓曲率减少了72%.
对于基于Ge的VCSEL来说,已经证明了10%的低值电流密度.
与基于GaAs的VCSEL相比,基于Ge的VCSEL的最大光差效率提高了19%.

结论:

成功开发并披露了一种基于Ge的新型VCSEL表和制造路径.
开发的基于Ge的VCSEL技术比传统的GaAs VCSEL提供了优越的晶圆质量和增强的设备性能指标.
这一突破为在地质基板上的光电子设备的先进异质集成铺平了道路.

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