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相关概念视频

Linear Approximation in Time Domain01:21

Linear Approximation in Time Domain

81
Nonlinear systems often require sophisticated approaches for accurate modeling and analysis, with state-space representation being particularly effective. This method is especially useful for systems where variables and parameters vary with time or operating conditions, such as in a simple pendulum or a translational mechanical system with nonlinear springs.
For a simple pendulum with a mass evenly distributed along its length and the center of mass located at half the pendulum's length,...
81
Linear Approximation in Frequency Domain01:26

Linear Approximation in Frequency Domain

89
Linear systems are characterized by two main properties: superposition and homogeneity. Superposition allows the response to multiple inputs to be the sum of the responses to each individual input. Homogeneity ensures that scaling an input by a scalar results in the response being scaled by the same scalar.
In contrast, nonlinear systems do not inherently possess these properties. However, for small deviations around an operating point, a nonlinear system can often be approximated as linear....
89

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相关实验视频

Updated: Jul 1, 2025

Design and Development of a Three-Dimensionally Printed Microscope Mask Alignment Adapter for the Fabrication of Multilayer Microfluidic Devices
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基于附加方法的线性EUV面罩优化.

Pinxuan He, Jiamin Liu, Honggang Gu

    Optics express
    |March 5, 2024
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    概括
    此摘要是机器生成的。

    本研究介绍了一种快速的EUV面罩优化方法,使用辅助方法来解决半导体制造中的厚面罩效应. 线性化梯度显著提高了先进生产节点的效率.

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    科学领域:

    • 摄影石版印刷 (photolithography) 是一种摄影方式.
    • 半导体制造业 半导体制造业
    • 计算式 lithography 的使用方法.

    背景情况:

    • 面具优化对于先进的EUV光刻技术至关重要,但由于高计算成本和厚面具效应,面临着挑战.
    • 现有的方法很难有效地优化EUV面罩,同时严格考虑厚面罩效应和光学近距离效应.

    研究的目的:

    • 提出一个线性化的EUV面罩优化方法,使用辅助方法进行快速有效的优化.
    • 为了应对计算方面的挑战,并根据严格的厚面罩效应考虑,提高EUV面罩优化的准确性.

    主要方法:

    • 引入了计算EUV面罩模型梯度的辅助方法.
    • 开发了一种线性化梯度,以有效地弥补厚面罩效应引起的晶圆图案扭曲.
    • 实施了优化EUV面具的两步战略.

    主要成果:

    • 附加方法可以计算EUV面罩模型的梯度.
    • 线性化梯度在粗微优化步骤中显示出大约40%的效率提高.
    • 拟议的方法显示了准确的全芯片EUV面罩优化.

    结论:

    • 基于附加方法的线性EUV面罩优化方法提供了快速有效的解决方案.
    • 这种方法成功地减轻了与EUV光刻中的厚面具效应相关的挑战.
    • 该方法是半导体生产中精确的全芯片EUV面罩优化的一个有希望的进步.