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纳米管结构的ASPS4-Se (x = 0, 1) 的结构
Collin D Morris1, Eric K Qian1, Patricia E Meza2
1Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.
单壁硫化纳米管 (AsPS4) 的合成和特征. 这些纳米管表现出半导体特性,带隙为2.7 eV,导电性来自跳过陷状态.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 固态化学 固态化学
背景情况:
- 单壁纳米管具有独特的电子和结构性质.
- 酸石化素是新型电子材料的潜在候选物.
研究的目的:
- 为了合成和表征单壁硫化 (AsPS4) 和化 (AsPS3Se) 纳米管.
- 研究这些纳米管的结构,电子和光学特性.
主要方法:
- 纳米管合成的固态反应.
- 单晶X射线衍射用于结构确定.
- 31P固态NMR光谱和光学吸收光谱用于属性分析.
主要成果:
- AsPS4纳米管成功合成了外径为~1.1nm的纳米管.
- 用 (AsPS3Se) 替代导致无形材料,阻碍了结构确定.
- AsPS4的带隙为2.7 eV,散装导电量为3.2 × 10^-6 S/cm.
- 在照明下的AsPS4中观察到负光导体效应.
结论:
- 单壁AsPS4纳米管具有半导体特性,其导电性归因于通过陷状态跳跃.
- 的结合破坏了纳米管的形成,导致无形结构.
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