相关实验视频

Updated: Jul 1, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

一个具有PdSe₂/SOI Schottky结的高性能宽带光晶体管阵列

Yexin Chen¹, Qinghai Zhu¹, Jiabao Sun²

¹College of Integrated Circuits, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China. msxu@zju.edu.cn.

|March 5, 2024

概括

我们开发了一种新的二化 (PdSe2) 和 (Si) 光传感器阵列,用于先进的光电子. 这种自动驾驶设备在广泛的频谱中提供了高性能,使复杂的成像应用成为可能.

科学领域:

材料科学材料科学材料科学
凝聚物质物理学凝聚物质物理学
纳米技术纳米技术

背景情况:

2D材料与 (Si) 的异质整合对于下一代光电子设备至关重要.
新的2D材料为设备增强提供了独特的电子和光学特性.
基于的技术是现代电子产品的基础.

研究的目的:

为了展示一个门调节的,自动驱动的,宽带光传感器阵列.
为了研究用于光电子应用的二化 (PdSe2) /Si Schottky连接的性能.
探索PdSe2/Si异构在多功能设备中的潜力.

主要方法:

使用在在绝缘体 (SOI) 基板上预先沉积的半金属PdSe2薄膜制造光电晶体管阵列.
描述光电晶体管在广泛的光谱范围 (UV到NIR) 的性能.
评估设备参数,包括响应能力,特定检测能力和响应时间在不同的门电压下.

主要成果:

由于PdSe2的零带隙和垂直异构结构,PdSe2/Si光电晶体管表现出宽带光伏特性.
实现了高性能指标:响应率为1.15 A W-1,特异检测能力为9.39 × 1010 斯,以及在808 nm的快速响应时间 (27.1/40.3 μs).
网关电压调制在V<0xE1><0xB5><0xA2>=5V时增强了对1.61A W-1的响应.
通过使用制造的光电晶体管使用4 × 4阵列传感器证明了成功的成像.

结论:

开发的PdSe2 / Si光传感器阵列是一种高性能,自动驱动的设备,适用于宽带光检测.
PdSe2与Si的异质整合使得具有增强光电性能的多功能光电子设备成为可能.
该设备显示了先进的成像应用和集成到基于Si的技术的巨大潜力.

更多相关视频

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Close-Space Sublimation-Deposited Ultra-Thin CdSeTe/CdTe Solar Cells for Enhanced Short-Circuit Current Density and Photoluminescence

Published on: March 6, 2020

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices

Published on: July 8, 2016

相关概念视频

P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

Schottky Barrier Diode

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...