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Updated: Jul 1, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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点缺陷 2D 过渡金属二甲基基化物中载体移动性有限

Zhongcan Xiao1, Rongjing Guo1, Chenmu Zhang1

  • 1Texas Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.

ACS nano
|March 6, 2024
PubMed
概括

由于较弱的电子缺陷合,过渡金属二甲基化物 (WX2) 显示出比同类物 (MoX2) 更高的电荷载体流动性. 优化缺陷度是提高电子设备性能的关键.

关键词:
两维材料是二维材料.航空公司的运营商流动性.缺陷散射是因为缺陷散射.电子运输是一种电子运输.过渡金属二甲基二甲基化物

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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication08:50

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相关概念视频

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Schottky Barrier Diode01:27

Schottky Barrier Diode

Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Carrier Generation and Recombination01:22

Carrier Generation and Recombination

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Metallic Solids02:37

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
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