相关实验视频

Updated: Jul 1, 2025

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers
12:20

Sputter Growth and Characterization of Metamagnetic B2-ordered FeRh Epilayers

Published on: October 5, 2013

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Fe 兴奋剂概况对基于 GaN 的 RF HEMT 电流崩的影响

Linling Xu1, Hui Guo1, Jiaqi Tao2

  • 1Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, Jiangsu 210093, China.

Chemistry (Weinheim an der Bergstrasse, Germany)
|March 7, 2024
PubMed
概括

这项研究调查了铁 (Fe) 兴奋剂配置如何影响化 (GaN) 高电子流动性晶体管 (HEMT) 的电流崩. 优化Fe兴奋剂可以在GaN RF HEMT中减少50%以上的电流崩.

关键词:
费陷 (Fe) 是一种陷.基于GaN的射频HEMT是基于GAN的目前的崩正在发生.兴奋剂个人资料 兴奋剂个人资料

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Scanning-probe Single-electron Capacitance Spectroscopy10:53

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