对Si-Doped κ-Ga2O3中SiDopants的原子位点占用量进行光电子全息研究 (001)

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
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Yuhua Tsai1,2, Yusuke Hashimoto3, ZeXu Sun3

  • 1National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan.

Nano letters
|March 7, 2024
PubMed
概括

这项研究表明,氧化 (Ga2O3) 中的 (Si) 剂占据了三个不同的替代位点. 四面体部位是最常见的,这表明它.

关键词:
在Ga2O3中.在Si-doped κ-Ga2O3O3中使用.摄影电子全息 (holography) 是一种光电子全息技术.在 κ-Ga2O3 中,

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