相关实验视频
Updated: Jul 1, 2025

15:47
Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
16.2K
有限的障碍局限状态
Tao Liu1, Kai Bai1, Yicheng Zhang1
1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, 430072, Wuhan, China.
Light, science & applications
|March 7, 2024
概括
我们发现,有限格子中的边界模式可以被捕获,挑战传统的指数衰变. 这种现象类似于连续体中的受界状态,允许在最小格子位点内完全定位.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 光子学 是一个光子学.
- 波浪现象是一种波浪现象.
背景情况:
- 有限格子中的边界模式通常表现为通往对面的道,导致不需要的合.
- 通道开通的概率通常被理解为随着系统大小的指数式衰减,需要很大的网格来实现微不足道的合.
研究的目的:
- 调查在有限数量的格子位点内捕获边界模式的可能性.
- 探索允许边界模式完全局部化的机制,无论传统的道行为如何.
主要方法:
- 对有限格子中的边界模式行为进行理论分析.
- 在微波频率使用介电光子晶体进行实验验证.
- 研究特定的波向量,其中道的概率消失.
主要成果:
- 证明某些边界模式的道概率可以在特定波向量上消失.
- 观察到极少数格子位点内完全捕获边界模式,即使没有明确的散带间隙.
- 发现被困状态的数量与边界正常的格子位置的数量相对应.
结论:
- 引入了有限的障碍束状态的新奇现象,类似于连续体中的束状态.
- 为光子晶体中这种特殊的捕获机制提供了实验证据.
- 突出了灵活控制光线合和操纵的潜力.
相关概念视频
BIBO stability of continuous and discrete -time systems
395
System stability is a fundamental concept in signal processing, often assessed using convolution. For a system to be considered bounded-input bounded-output (BIBO) stable, any bounded input signal must produce a bounded output signal. A bounded input signal is one where the modulus does not exceed a certain constant at any point in time.
To determine the BIBO stability, the convolution integral is utilized when a bounded continuous-time input is applied to a Linear Time-Invariant (LTI) system....
To determine the BIBO stability, the convolution integral is utilized when a bounded continuous-time input is applied to a Linear Time-Invariant (LTI) system....
395
Metal-Semiconductor Junctions
350
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
350
Fermi Level
598
The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
598
Physiological Barriers
3.5K
Physiological barriers are semi-permeable cellular structures restricting drug diffusion into intracellular compartments and tissues. There are six types of physiological barriers: blood endothelial, cell membrane, blood-brain, blood-cerebrospinal fluid (CSF), blood-placenta, and blood-testis barriers.
The blood endothelial barrier is the most porous of these. It allows all small ionized, un-ionized, and lipophilic molecules to pass through the endothelial lining into the interstitial space...
The blood endothelial barrier is the most porous of these. It allows all small ionized, un-ionized, and lipophilic molecules to pass through the endothelial lining into the interstitial space...
3.5K
Fermi Level Dynamics
246
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
246
Schottky Barrier Diode
349
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
349

