BIBO stability of continuous and discrete -time systems
Metal-Semiconductor Junctions
Fermi Level
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Updated: Jul 1, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Tao Liu1, Kai Bai1, Yicheng Zhang1
1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, 430072, Wuhan, China.
我们发现,有限格子中的边界模式可以被捕获,挑战传统的指数衰变. 这种现象类似于连续体中的受界状态,允许在最小格子位点内完全定位.
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