在磁磁薄膜 MnAu2 中切换和检测室温度
Hidetoshi Masuda1, Takeshi Seki2, Jun-Ichiro Ohe3
1Institute for Materials Research, Tohoku University, Sendai, Japan. hidetoshi.masuda.c8@tohoku.ac.jp.
Nature communications
|March 7, 2024
概括
现在可以在室温下使用电流脉冲在全磁导体中切换奇拉性. 这一突破使得简单的检测方法成为可能,为先进的基于磁体的自旋电子学铺平了道路.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 这就是Spintronics.
背景情况:
- 磁体结构具有性,这是一个强大的属性,对磁性记忆有很大的希望.
- 目前用于控制度的方法需要低温和复杂的程序.
研究的目的:
- 通过使用电流脉冲来演示用电磁材料的室温性切换.
- 开发一种简单的方法来检测在零磁场的情况下的奇拉性.
主要方法:
- 在薄膜MnAu2磁导体中使用电流脉冲进行性切换.
- 在MnAu2/Pt双层装置中使用横向电阻测量,通过旋转贝里阶段检测度.
主要成果:
- 在MnAu2中在室温下实现了奇拉性切换.
- 在零磁场下使用简单的电阻测量成功检测出奇拉性.
结论:
- 通过室温操作和简化控制/检测,证明了螺旋磁性材料对自旋电子的实际可行性.
- 研究结果表明,这可能是通往下一代磁性记忆和逻辑设备的道路.
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