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Updated: Jul 1, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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斯科特基屏障的漂移 阶段变化的高度 材料

Rivka-Galya Nir-Harwood1, Guy Cohen2, Amlan Majumdar2

  • 1Viterbi Faculty of Electrical & Computer Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.

ACS nano
|March 8, 2024
PubMed
概括

阶段变换内存 (PCM) 设备中的电阻漂移主要是由 Schottky 屏障在接口上的高度引起的,而不是批量效应. 这一发现对于开发稳定的神经形态计算硬件至关重要.

关键词:
斯科特基屏障的高度是高的接触电阻 接触电阻 接触电阻阶段变化记忆的阶段变化.阻力漂移的阻力漂移是什么热离子排放的热离子排放

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