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Updated: Jul 1, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
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在空气中氧化WS2单晶的S-空隙度的作用

Fabio Bussolotti1, Hiroyo Kawai2, Thathsara D Maddumapatabandi1

  • 1Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, #08-03 Innovis, Singapore 138634, Republic of Singapore.

ACS nano
|March 11, 2024
PubMed
概括

半导体过渡金属二化物 (TMD) 的缺陷,如WS2驱动氧化,特别是在高度 (≥10%),形成WO3. 了解这种缺陷驱动的氧化是稳定的二维材料设备制造和性能的关键.

关键词:
环境空气氧化环境空气氧化缺陷 缺陷 缺陷 缺陷 缺陷离子辐射辐射的离子辐射.光辐射光谱学 (photoemission spectroscopy) 是一种使用光辐射光谱的方法.过渡金属二甲基二甲基化物

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