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通过in situ生成的Ni和Ni₃Si提高SiCN(Ni) /BN陶的电磁波吸收性能

Yanchun Tong¹, Chunmiao Liu¹, Chang Liu¹

¹School of Materials Science and Engineering, Shandong University of Technology Zibo 255049 P. R. China guoxue@sdut.edu.cn wshgang@sdut.edu.cn.

|March 12, 2024

概括

这项研究开发了SiCN(Ni) /BN陶,用于优越的电磁波 (EMW) 吸收. 该材料以7%重量的乙烯基酸盐进行了优化,具有出色的阻抗匹配和广泛的吸收带宽.

科学领域:

材料科学材料科学材料科学
陶工程陶工程

背景情况:

先进的陶材料对于电磁波 (EMW) 吸收应用至关重要.
优化阻抗匹配是提高EMW吸收效率的关键.

研究的目的:

准备和表征SiCN,Ni,BN陶,以便有效吸收电磁波.
为了研究乙氨酸 (NA) 含量对EMW吸收特性的影响.

主要方法:

在SiCN/BN矩阵内通过添加乙烯基酸盐在现场形成Ni和Ni3Si.
系统地改变NA含量以优化陶成分.
电磁参数测试以评估反射损失 (RL) 和有效吸收带宽 (EAB).

主要成果:

SiCN(Ni) /BN陶显示出出色的电磁波吸收性能.
在7重%的NA含量 (SiCN-7) 实现了最佳阻抗匹配.
SiCN-7的最小反射损失 (RLmin) 为-53.47dB,有效吸收带宽 (EAB) 为2.32GHz.
极化损失占介电损失的99%以上,这表明能量消耗效率高.

结论:

添加NA有效地改善了SiCN/BN陶的阻抗匹配和EMW吸收.
由于其优越的EMW吸收和降低的雷达截面 (RCS),SiCN-7显示出有前途的实际应用潜力.
该材料为先进的电磁波吸收需求提供了可行的解决方案.

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