相关实验视频

Updated: Jul 1, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

一个线性交叉合门驱动的半浮体散装低功率宽输入范围的传导器

Kulbhushan Sharma¹, Ashish Sachdeva²

¹VLSI Centre of Excellence, Chitkara University Institute of Engineering and Technology, Chitkara University, Rajpura, Punjab 140401, India.

The Review of scientific instruments

|March 12, 2024

概括

本研究介绍了一种新型的运行传导放大器 (OTA),旨在用于低功率,高线性医疗信号调节. 拟议的设计在低电源电压下实现了出色的性能,使其成为生物信号应用的理想选择.

科学领域:

* 电气工程电气工程
* 生物医学工程 * 生物医学工程
* 模拟集成电路设计

背景情况:

* 操作传导放大器 (OTA) 对于医疗保健应用中的信号调节至关重要,要求高线性和低功耗.
*传统技术在低供应电压下难以实现高线性和低功率,这对准确的生物信号处理构成了挑战.
*现有的OTA通常缺乏敏感医疗器械应用所需的性能指标.

研究的目的:

*为医疗保健应用提出一种新的运行传导放大器 (OTA) 架构.
* 为了实现高线性和低功耗运行,在0.5V的低供应电压下实现±0.5V.
* 证明拟议的OTA适用于准确的生物信号调节的适用性.

主要方法:

* 设计一个交叉合门驱动的准浮体散装 (CGDQFB) MOSFET OTA.
* 整合源退化的线性化技术.
*使用180nm标准CMOS工艺进行布局后模拟.

主要成果:

* 实现了0.321μS的传导率,331 MΩ的输出阻抗,和40.54dB的直流增益.
* 证明了626.7mV的广泛输入电压范围,总波扭曲 (THD) 低至51.09dB.
* 在200次蒙特卡洛代中,显示了0.45μW的超低功耗和最小的增益/THD变化 (0.003/0.036) 在200次蒙特卡洛代中.

结论:

* 拟议的CGDQFB OTA符合医疗保健中高质量,准确的信号调节的严格要求.
* 它的低功耗操作和在低供应电压下高线性使其成为可穿戴和可植入生物信号监测设备的合适选择.
* 这种设计促进了下一代医疗技术高效可靠的模拟前端的开发.

更多相关视频

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

相关概念视频

MOSFET Amplifiers

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

Small-Signal Analysis of MOSFET Amplifiers

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

Characteristics of MOSFET

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

MOSFET

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...