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Updated: Jul 1, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

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超薄的范德瓦尔斯磁道结基于六角化的单原子空位

Halimah Harfah1, Yusuf Wicaksono2, Gagus Ketut Sunnardianto3,4,5

  • 1Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka 560-0043, Japan. harfah.h@opt.mp.es.osaka-u.ac.jp.

Physical chemistry chemical physics : PCCP
|March 12, 2024
PubMed
概括

我们开发了一种基于石墨烯的新型磁道结,使用在六角化中的空缺. 这种结构具有很高的道磁阻比,为先进的自旋电子设备铺平了道路.

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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

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