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Updated: Jul 1, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

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积极偏差应力不稳定性对值电压的依赖及其起源于溶液处理的注氧化薄膜晶体管中的依赖

Jeong-Hyeon Na1, Jun-Hyeong Park1, Won Park1

  • 1School of Electronic and Electrical Engineering, Kyungpook National University, 80 Daehakro, Bukgu, Daegu 41566, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|March 12, 2024
PubMed
概括

在氧化薄膜晶体管 (TFT) 中的兴奋剂控制了门电压,减少了在正偏应力 (PBS) 下的不稳定性. 这项研究阐明了缓慢和快速陷在电子设备TFT性能中的作用.

关键词:
偏见的不稳定性 偏见的不稳定性降解机制的降解机制有氧化物半导体半导体薄膜晶体管 (TFT) 的使用门电压的依赖性 门电压的依赖性

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots15:47

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