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Updated: Jul 1, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Published on: December 5, 2015

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半导体纳米材料中的玻璃状过渡体

Isaac Balberg1

  • 1The Racah Institute of Physics, The Hebrew University, Jerusalem 9190401, Israel.

Nanomaterials (Basel, Switzerland)
|March 12, 2024
PubMed
概括

这项研究表明,半导体纳米材料的玻璃状行为源于它们的纳米尺度特性,受量子束和库伦堡封锁效应的影响. 了解这些机制是开发先进纳米设备的关键.

关键词:
玻璃的行为玻璃的行为.在纳米半导体上.非挥发性电气和光学存储器量子束和库伦堡封锁的量子束和库伦堡封锁.量子点和 MOSFET 的使用.短暂的电流是短暂的电流.

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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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