瓦特级连续波抗氧化物激光二极管,具有2.5微米以上的高载波受限活性区域
Hongguang Yu1,2, Chengao Yang3,4, Yihang Chen1,2
1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Discover nano
|March 13, 2024
概括
研究人员开发了一种针对抗氧化物激光二极管的新型活性区域,改善了对高功率中红外辐射的载体限制. 这一突破提高了2.5微米以上的基于GaSb的激光器的性能.
科学领域:
- 光电学是指光电子产品.
- 半导体物理 半导体物理
- 材料科学 材料科学 材料科学
背景情况:
- 在中红外应用中,反胺激光二极管在室温以上提供高性能.
- 性能降低是由于载体限制减少而增加的排放波长而导致的.
- 基于GaSb的I型多量子井 (MQW) 极激光器遭受2.5微米以上载体封闭度较差的困扰.
研究的目的:
- 为了解决基于GaSb的I型MQW二极管激光器中运载体限制较差的问题.
- 为了增强活动区域中电子和孔的载体限制.
- 为了实现高功率的中红外激光发射在2.5微米以上.
主要方法:
- 设计了一个使用Al0.5GaAs0.04Sb作为量子屏障的新型活性区域.
- 在量子屏障中使用间接带隙材料.
- 研究了较大的带偏移对传导和价值带的影响.
主要成果:
- 实现了增强的载体封闭和差异增益.
- 证明了高的内部量子效率和低值电流密度.
- 在低注入电流下获得的瓦特级输出光学功率.
结论:
- 使用间接隙半导体作为量子屏障提供了一个直接且具有成本效益的解决方案.
- 这种方法显著改善了基于GaSb的MQW激光器中的载体限制.
- 能够实现高功率的中红外激光性能.
相关概念视频
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This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
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Indirect generation involves an...
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