在高Mg注的氨热GaN中形成长进的空隙和间隙
Marcin Zajac1, Paweł Kaminski2, Roman Kozlowski2
1Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland.
Materials (Basel, Switzerland)
|March 13, 2024
概括
这项研究首次揭示了添加化 (GaN) 水晶中的内在点缺陷. 这些缺陷被称为空隙和间隙,会影响材料的电特性.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 晶体的成长 晶体的成长
背景情况:
- 半绝缘化 (GaN) 对于高功率电子设备至关重要.
- 了解内在点缺陷是优化GaN属性的关键.
- 氨热 (AT) 方法是种植高质量的GaN晶体的主要技术.
研究的目的:
- 为了调查Mg-doped SI AT GaN.N的子网中的内在点缺陷.
- 识别和描述与这些缺陷相关的深陷.
- 为了将缺陷形成与Mg度和晶体特性相关联.
主要方法:
- 拉普拉斯变换光诱导的短暂光谱学 (LT-PITS) 检测深陷.
- 温度依赖的霍尔效应测量用于电气表征.
- 使用氨热方法生长Mg-doped的GaN晶体.
主要成果:
- 在补偿的p型GaN:Mg中观察到深陷,度不同 (6 × 10^18和2 × 10^19 cm^-3).
- 确定了三个靠近的陷 (430,450,460 meV),归因于空隙和分裂的间隙.
- 在较低度样本中发现了占主导地位的中间空隙陷 (1870 meV).
结论:
- 提出了由于GaN:Mg中的局部应变而导致原子移位的机制.
- 证明了的度对缺陷形成和电荷补偿的显著影响.
- 提供了关于SI AT GaN:Mg中的点缺陷行为的基本见解.
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