在LaFeO3-δ薄膜中减少诱导的磁性行为
Nathan D Arndt1, Eitan Hershkovitz1, Labdhi Shah1
1Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA.
Materials (Basel, Switzerland)
|March 13, 2024
概括
在铁 (LaFeO3-δ) 薄膜中减少氧气会产生不同的磁性状态. 不同的基质制备方法影响氧气损失和磁性,显示了多状态内存应用的潜力.
科学领域:
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
- 薄膜技术 薄膜技术
背景情况:
- 兰铁 (LaFeO3-δ) 正在探索磁离子记忆应用.
- 氧气固体测量显著影响矿氧化物的磁性.
研究的目的:
- 为了研究氧气减少对LaFeO3-δ薄膜磁性特性的影响.
- 评估LaFeO3-δ对非挥发性多态内存设备的潜力.
主要方法:
- 在不同的酸 (SrTiO3) 基板上,LaFeO3-δ薄膜的生长 (接受与化).
- 对薄膜进行受控的氧气减少.
- 结构和磁性属性的表征,包括在各种温度下残留磁化.
主要成果:
- 在经过冷却的SrTiO上培养的LaFeO3-δ薄膜损失了更多的氧气,并且与接受的SrTiO3的薄膜相比,呈现出更多的分解微结构.
- 低氧薄膜显示了温度依赖的磁性行为,在化基板的情况下,残留磁化持续到室温.
- 在相同的材料中,通过不同的氧降解水平,可以获得不同的磁性状态.
结论:
- 基质的制备极大地影响了LaFeO3-δ薄膜的氧气损失和磁性特性.
- LaFeO3-δ提供了一个可调节的平台,通过受控的氧降解来实现多种磁态.
- 这些发现支持LaFeO3-δ作为先进非挥发性多态内存技术的有前途材料.
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