设计和3D电气模拟可控制的等差距大面积漂移探测器
Jun Zhao1, Tao Long1, Mingyang Wang1
1School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China.
Sensors (Basel, Switzerland)
|March 13, 2024
概括
一个新的可控制漂移探测器 (L-SDD) 设计将泄漏电流和无效探测器面积最小化. 这一创新确保了统一的电场,以有效收集电子,提高探测器的性能.
科学领域:
- 半导体设备物理学 半导体设备物理
- 辐射检测技术 辐射检测技术
- 大面积的漂移探测器 (L-SDD)
背景情况:
- 传统的漂移探测器 (SDD) 面临着更大的设计中越来越大的差距的挑战,从而增加了无效探测器面积.
- 在SiO2-Si接口的表面泄漏电流是影响SDD性能的关键因素.
研究的目的:
- 设计一个可控制的,相同间隙的,大面积的漂移探测器 (L-SDD),克服以前设计的局限性.
- 通过最小化SiO2-Si接口来减少表面泄漏电流.
- 为了确保一个统一的间隙,无论探测器的大小,从而最大限度地减少无效的探测器区域.
主要方法:
- 为了减少SiO2-Si接口,开发了一种可控制的等差设计.
- 为设计计算,选择了一个半径为1厘米的螺旋六角等距离L-SDD.
- 实施了3D建模和模拟来分析设备的电气性能.
主要成果:
- 模拟证实了统一的内部潜力梯度分布,建立了一个漂移电场.
- 电场引导电子漂移到采集阳极,表明一个很好的电子漂移通道.
- 对漂移通道电性能的分析验证了设计方法.
结论:
- 可控制的等间隙L-SDD设计有效地减少了表面泄漏电流和无效探测器面积.
- 均的漂移电场和优秀的电子漂移通道证明了该设计对于先进的辐射检测的可行性.
- 拟议的设计方法被验证为正确且适用于大面积漂移探测器.
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