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在PPD中协同辐射效应CMOS图像传感器由中子位移损伤和玛电离损伤诱导

Zu-Jun Wang^1,2, Yuan-Yuan Xue¹, Ning Tang²

¹National Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, China.

Sensors (Basel, Switzerland)

|March 13, 2024

概括

中子和玛辐射协同影响0.18微米固定光二极管CMOS图像传感器 (CIS). 之前的中子暴露显著增强了马诱导的暗信号增加,与马暴露不同.

科学领域:

半导体设备物理学的物理
辐射对电子产品的影响
图像传感器技术图像传感器技术

背景情况:

0.18μm固定光二极管CMOS图像传感器 (CIS) 容易受到辐射损伤.
了解中子位移损伤和玛电离损伤的协同效应对于在恶劣环境中可靠的传感器操作至关重要.

研究的目的:

为了研究连续中子和玛辐射对0.18微米PPD CISs的协同效应.
描述移位损伤和电离损伤对CIS性能的单独和综合影响.

主要方法:

用反应堆中子束 (高达1×10^11n/cm^2) 和60Co马射线 (高达200krad(Si)) 辐射CIS.
连续照射实验,中子和玛辐射的次序不同.
描述CIS性能,重点关注暗信号的增加.
TCAD (技术计算机辅助设计) 模拟用于模拟辐射损伤效应.

主要成果:

对暗信号增加的中子位移损伤效应没有受到先前马辐射的显著改变.
以前的中子辐射显著增加了随后的马电离损伤引起的暗信号增加.
观察到协同效应,辐射的顺序发挥了关键作用.

结论:

中子和玛辐射的顺序顺序显著影响0.18微米PPDCIS中的辐射损伤.
中子辐射使CIS更容易受到随后的马诱导暗信号的增加.
与实验数据相结合的TCAD模拟提供了对这些协同辐射效应的全面了解.

关键词:

这是一个CMOS图像传感器 (CIS).暗信号的信号是黑暗的暗信号不均性 (DSNU) 是指暗信号不均性.移位损伤移位损伤马射线是指马射线的射线.中子中子是什么?中子中子是什么?辐射辐射辐射辐射的辐射有协同效应的效应.总的电离剂量 (TID)

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