在铁磁Janus单层MnSbBiS2Te2中引起应变的拓相过渡
Romakanta Bhattarai1, Peter Minch1, Yunfan Liang1
1Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA. rhonet@rpi.edu.
Physical chemistry chemical physics : PCCP
|March 14, 2024
概括
对MnSbBiS2Te2施加压力会诱导拓相位过渡,从而产生具有量子异常霍尔效应的切恩绝缘体. 这一发现推进了用于自旋电子学和量子计算的拓材料.
科学领域:
- 凝聚物质物理学 凝聚物质物理学
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- 拓材料具有独特的电子特性,具有先进技术的潜力.
- 斯材料,由于它们的反向对称性被打破,是新拓现象的有希望的候选者.
- 应变工程是一种强大的工具,可以调整材料属性并诱导相位过渡.
研究的目的:
- 为了研究双轴应变对铁磁性斯单层MnSbBiS2Te2.2的电子,磁性和拓性质的影响.
- 为了确定诱导拓相位过渡的临界应变值.
- 探索MnSbBiS2Te2在旋转电子和量子计算中的应用方面的潜力.
主要方法:
- 使用第一原则计算来模拟材料特性.
- 双轴应变应用于 -8%至 +8%的范围内.
- 分析了电子带结构,磁性特性和拓不变量.
主要成果:
- MnSbBiS2Te2的基本状态是金属的,具有离平面外的磁性轻轴.
- 在-4%和-7%之间的压缩应变打开了带隙.
- 在5%的双轴应变时,发生了带有量子异常霍尔 (QAH) 效应的切恩绝缘体的拓相过渡.
- 双轴应变和旋转轨道合 (SOC) 驱动着拓过渡.
- 应变也会影响磁性轻轴方向.
- 计算的基里温度是24K.
结论:
- MnSbBiS2Te2 呈现出可以调节应变的拓相位过渡.
- 该材料可以作为切尔恩绝缘体,在特定应变条件下显示QAH效应.
- 这项研究突出了MnSbBiS2Te2在开发下一代电子设备方面的潜力,包括自旋电子,量子计算和无散射电子.
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