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在以血小板为基础的InGaN纳米LED结构中,对暗线缺陷的阴极发光研究

Anders Gustafsson¹, Axel R Persson^2,3, Per O Å Persson²

¹Solid State Physics and NanoLund, Lund University, Box 118, Lund SE-221 00, Sweden.

|March 14, 2024

概括

研究人员对纳米LED发射红色的印化 (InGaN) 进行了研究,发现暗线缺陷是由堆叠不匹配边界引起的. 建议使用平面模板来防止这些缺陷,并改善InGaN的光学性能.

科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

异构的印化 (InGaN) 血小板正在研究红色排放应用.
纳米级发光二极管 (LED) 需要高质量的InGaN材料.
来自缺陷的非辐射辐射可以显著降低LED性能.

研究的目的:

为了研究红色发射的InGaN血小板的光学特性.
为了确定导致非辐射辐射的暗线缺陷的来源.
提出减少InGaN生长缺陷的方法.

主要方法:

超光谱阴极光发光 (CL) 成像用于分析缺陷结构.
层次成像揭示了缺陷通过InGaN结构的传播.
化学机械抛光 (CMP) 用于准备InGaN模板.

主要成果:

在InGaN血小板中观察到与非辐射发射相关的暗线缺陷.
这些缺陷起源于较低的屏障层,并向上传播.
缺陷形成与堆叠不匹配边界从多次播种和在圆顶形模板上的步骤捆绑有关.

结论:

在InGaN血小板中的暗线缺陷归因于在圆顶形模板上堆叠不匹配边界.
该研究强调了模板形态在缺陷形成中的关键作用.
建议使用平面模板作为一种策略,以减轻缺陷并增强纳米LED的InGaN光学特性.

关键词:

III - 亚化物亚化物阴道光发光的光泽.血小板血小板是堆叠不匹配的边界堆叠不匹配的边界 μ-LED是指一个LED.

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