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Updated: Aug 16, 2026

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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在基于AlGaInP的垂直微型发光二极管中通过表面纹理提高光取效率

Siyuan Cui, Lang Shi, Leonard Jin

    Optics letters
    |March 15, 2024
    PubMed
    概括

    研究人员通过创建多孔表面,改进了,,和化 (AlGaInP) 发光二极管 (LED) 中的光提取. 这种方法提高了外部量子效率 (EQE),而不影响电性能.

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    相关概念视频

    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...