缺陷对Cu-doped rutile TiO2微花的线性和非线性光学特性的影响
Subhashree Sahoo1, Km Surbhi1, Sourav Bhakta1
1School of Physical Sciences, National Institute of Science Education and Research (NISER) Bhubaneswar, An OCC of Homi Bhabha National Institute, Jatni-752050, Odisha, India. pratap.sahoo@niser.ac.in.
Physical chemistry chemical physics : PCCP
|March 18, 2024
概括
铜二氧化纳米结构中的缺陷工程有效调整非线性光学特性. 这种对缺陷的控制增强了它们对先进光学应用的潜力,例如光学限制和切换.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术纳米技术
- 光电学是指光电子产品.
背景情况:
- 缺陷和混乱显著影响纳米结构的电子结构和特性.
- 定制这些特性对于先进的材料应用至关重要.
研究的目的:
- 调查缺陷工程对Cu-doped TiO2纳米结构的线性和非线性光学 (NLO) 性能的影响.
- 探索缺陷度,带隙和NLO行为之间的关系.
主要方法:
- 合成 Cu-doped TiO2 的花形纳米结构.
- 密度函数理论 (DFT) 用于带隙估计.
- X射线光电子光谱 (XPS) 用于缺陷分析.
- 单光束Z扫描技术用于NLO测量.
主要成果:
- doping 诱导缺陷状态,减少带隙和改变发光.
- 氧缺陷被确定为带隙缩小和PL火的关键因素.
- Z-扫描测量显示了和吸收和自我聚焦行为.
- NLO属性显示出对缺陷度和带隙的线性依赖.
结论:
- 缺陷工程是一种可行的策略,用于调整 Cu-doped TiO2.2 的 NLO 特性.
- 这些纳米结构在光学限制,切换和光二极管应用中表现出有希望的特性.
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