超紧和高效的光子波导曲线具有不同的配置,由拓优化设计
Sabaina Irfan1, Jae-Yong Kim1, Hamza Kurt2
1School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea.
Scientific reports
|March 19, 2024
概括
针对在绝缘体 (SOI) 平台的新型拓优化L曲线和U曲线显著降低了光学损失. 这些紧的设计提高了光子电路的集成密度和性能.
科学领域:
- 光子学和光学工程 光子学和光学工程
- 材料科学 (在绝缘体上的)
背景情况:
- 集成电路中通过曲的光学信号传输通常会产生高损失和模式扭曲.
- 传统的大半径曲限制了设备集成密度.
- 在紧的波导曲线中最大限度地减少光学损失对于先进的光子应用至关重要.
研究的目的:
- 为220nm在绝缘体 (SOI) 平台提出和设计新型拓优化的L-bend和U-bend结构.
- 为了最大限度地减少光学插入损失和模式扭曲在紧的波导曲线.
- 为了提高光子集成电路中的集成密度.
主要方法:
- 拓优化技术被用于设计L-bend和U-bend结构.
- 在220nm SOI平台上进行模拟.
- 实验验证使用一个带有优化U曲线的曲线进行.
主要成果:
- 最优化的L曲线,其足迹小于1μm × 1μm,其最大插入损失为0.78dB.
- 优化的U-曲,其足迹小于1.5μm × 1.5μm,显示最大插入损失为3.16dB.
- 与1450-1650 nm的弧型曲相比,优化曲实现了超过50%的插入损失减少.
- 对一个带有16个优化的U曲线的曲线的实验结果显示,平均插入损失为1.23dB (1520-1580nm).
结论:
- 拓优化的L曲线和U曲线为紧的光子电路提供了显著的光学损失减少.
- 这些优化曲线适用于SOI平台上的高密度集成.
- 这些发现表明,在使用优化曲设计的集成光子学中,减少损失的潜力很高.
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